Shenzhen ATFU Electronics Technology ltd
Shenzhen ATFU Electronics Technology LTD
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IRFR5305PbF
IRFU5305PbF
Fifth Generation HEXFET s from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
Absolute Maximum Ratings
|
Parameter |
Max. |
Units |
|
|
ID @ TC = 25°C |
Continuous Drain Current, VGS @ -10V |
-31 |
A |
|
ID @ TC = 100°C |
Continuous Drain Current, VGS @ -10V |
-22 |
|
|
IDM |
Pulsed Drain Current |